JPH0235458B2 - - Google Patents

Info

Publication number
JPH0235458B2
JPH0235458B2 JP56091322A JP9132281A JPH0235458B2 JP H0235458 B2 JPH0235458 B2 JP H0235458B2 JP 56091322 A JP56091322 A JP 56091322A JP 9132281 A JP9132281 A JP 9132281A JP H0235458 B2 JPH0235458 B2 JP H0235458B2
Authority
JP
Japan
Prior art keywords
layer
film
semiconductor substrate
sio
polycrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56091322A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57206071A (en
Inventor
Toshihiko Fukuyama
Yoshinobu Monma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56091322A priority Critical patent/JPS57206071A/ja
Publication of JPS57206071A publication Critical patent/JPS57206071A/ja
Publication of JPH0235458B2 publication Critical patent/JPH0235458B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
JP56091322A 1981-06-12 1981-06-12 Semiconductor device and manufacture thereof Granted JPS57206071A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56091322A JPS57206071A (en) 1981-06-12 1981-06-12 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56091322A JPS57206071A (en) 1981-06-12 1981-06-12 Semiconductor device and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS57206071A JPS57206071A (en) 1982-12-17
JPH0235458B2 true JPH0235458B2 (en]) 1990-08-10

Family

ID=14023214

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56091322A Granted JPS57206071A (en) 1981-06-12 1981-06-12 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57206071A (en])

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61183964A (ja) * 1985-02-08 1986-08-16 Matsushita Electronics Corp 半導体装置の製造方法
JPS6233457A (ja) * 1985-08-06 1987-02-13 Nec Corp 半導体集積回路装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53132275A (en) * 1977-04-25 1978-11-17 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its production
US4157269A (en) * 1978-06-06 1979-06-05 International Business Machines Corporation Utilizing polysilicon diffusion sources and special masking techniques

Also Published As

Publication number Publication date
JPS57206071A (en) 1982-12-17

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